SP000096088
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationP-CH
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID) (A)80
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Avalanche Energy Rating (Eas) (mJ)823
- Pulsed Drain Current-Max (IDM) (A)320
- Drain-source On Resistance-Max (ohm)0.023
- Screening Level / Reference StandardAEC-Q101
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SP000096088