SP000013906
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, TO-247
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.4 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-247
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)94 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)560 ns
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-40 Cel
- Collector Current-Max (IC)100 A
- Power Dissipation-Max (Abs)375 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max1200 V
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SP000013906