SNXH600B100H4Q2F2S1G-S
ONSEMI
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 173A I(C), 1000V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X50
- Configuration3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- J-STD-609 Codee3
- VCEsat-Max (V)2.3
- Case ConnectionISOLATED
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionUPPER
- Number of Elements6
- Number of Terminals50
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)422
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)149.83
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)641.42
- Collector Current-Max (IC) (A)173
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6
- Collector-emitter Voltage-Max (V)1000
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SNXH600B100H4Q2F2S1G-S