SNXH100M65L3Q2F2PG
ONSEMI
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 263A I(C), 650V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X40
- ConfigurationSERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- J-STD-609 Codee3
- VCEsat-Max (V)2.2
- Case ConnectionISOLATED
- Terminal FinishMATTE TIN
- Terminal PositionUPPER
- Number of Elements8
- Number of Terminals40
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)339
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)357
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)3780
- Collector Current-Max (IC) (A)263
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)650
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SNXH100M65L3Q2F2PG