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SMUN5116DW1T1G

ONSEMI

ONSEMI SMUN5116DW1T1G
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PDSO-G6
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • J-STD-609 Code
    e3
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Terminal Position
    DUAL
  • Additional Feature
    BUILT IN BIAS RESISTOR
  • Number of Elements
    2
  • Number of Terminals
    6
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    PNP
  • DC Current Gain-Min (hFE)
    160
  • Power Dissipation-Max (W)
    0.385
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    260
  • Collector Current-Max (IC) (A)
    0.1
  • Collector-emitter Voltage-Max (V)
    50
  • Screening Level / Reference Standard
    AEC-Q101
  • Time@Peak Reflow Temperature-Max (s)
    30

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SMUN5116DW1T1G
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SMUN5116DW1T1G