SKB10N60A
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (ns)32
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)15
- Power Dissipation-Max (W)92
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)40
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)245
- Turn-off Time-Nom (toff) (ns)224
- Collector Current-Max (IC) (A)20
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)5
- Collector-emitter Voltage-Max (V)600
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SKB10N60A