SIGC54T65R3E
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 650V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max (V)1.77
- Polarity/Channel TypeN-Channel
- Transistor Element MaterialSILICON
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.4
- Collector-emitter Voltage-Max (V)650
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 suppliers available to buy or to bid for SIGC54T65R3E
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
SIGC54T65R3E