SIGC41T120R3
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- DescriptionInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUUC-N
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- J-STD-609 Codee0
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)135
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)610
- Collector Current-Max (IC) (A)35
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)1200
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SIGC41T120R3