SIGC25T60SNCUNSAWNX6SA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 600V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.5 V
- Polarity/Channel TypeN-Channel
- Turn-on Time-Nom (ton)93 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)469 ns
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max5 V
- Collector-emitter Voltage-Max600 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 suppliers available to buy or to bid for SIGC25T60SNCUNSAWNX6SA1
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
SIGC25T60SNCUNSAWNX6SA1