SIGC185T350R2CH
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 3500V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-XUUC-N
- ConfigurationSINGLE
- JESD-609 Codee3
- Package ShapeSQUARE
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- Terminal FinishMATTE TIN
- Terminal PositionUPPER
- Number of Elements1
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)1150 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)3030 ns
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)50 A
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max5.9 V
- Collector-emitter Voltage-Max3500 V
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SIGC185T350R2CH
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SIGC185T350R2CH