SIGC12T120EX1SA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 1200V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max (V)2.1
- Polarity/Channel TypeN-Channel
- Transistor Element MaterialSILICON
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)1200
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SIGC12T120EX1SA1
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SIGC12T120EX1SA1