SGP23N60UF
ONSEMI
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.6 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal PositionSINGLE
- Fall Time-Max (tf)250 ns
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)55 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Max (toff)450 ns
- Turn-off Time-Nom (toff)320 ns
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Collector Current-Max (IC)23 A
- Power Dissipation-Max (Abs)100 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max600 V
0 suppliers available to buy or to bid for SGP23N60UF
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
SGP23N60UF