SGB15N120/SN
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 1200V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Polarity/Channel TypeN-Channel
- Turn-on Time-Nom (ton)54 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)779 ns
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max5 V
- Collector-emitter Voltage-Max1200 V
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SGB15N120/SN
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SGB15N120/SN