SF800N23
Toshiba Corporation
- Lifecycle statusActive-Unconfirmed
- DescriptionSilicon Controlled Rectifier, 800A I(T), 1000V V(DRM)
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Holding Current-Max300 mA
- Leakage Current-Max35 mA
- Trigger Device TypeSCR
- On-State Voltage-Max2.1 V
- On-state Current-Max800 A
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-45 Cel
- DC Gate Trigger Current-Max320 mA
- DC Gate Trigger Voltage-Max4 V
- Non-Repetitive Pk On-state Cur13000 A
- Repetitive Peak Off-state Voltage1000 V
- Critical Rate of Rise of Off-state Voltage-Min100 V/us
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SF800N23