S9G09A by Toshiba Corporation | Sourcengine

Toshiba Corporation S9G09A

Lifecycle status
Active
Description
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Junction FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Drain Current-Max (ID) (A)
20
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
15