S6X06B(ANSD,Q)
Toshiba Corporation
- Lifecycle statusActive
- DescriptionInsulated Gate Bipolar Transistor, 4500V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationMOTOR CONTROL
- JESD-30 CodeO-XXDB-X4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormUNSPECIFIED
- Terminal PositionUNSPECIFIED
- Number of Elements1
- Number of Terminals4
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)5000
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)1500
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)9000
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-40
- Collector-emitter Voltage-Max (V)4500
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S6X06B(ANSD,Q)