S2507
Toshiba Corporation
- Lifecycle statusActive-Unconfirmed
- DescriptionRF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, C Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeO-CRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandC BAND
- Power Gain-Min (Gp) (dB)10
- DC Current Gain-Min (hFE)30
- Power Dissipation-Max (W)0.15
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.03
- Operating Temperature-Max (Cel)175
- Collector-emitter Voltage-Max (V)10
- Power Dissipation Ambient-Max (W)0.15
- Collector-base Capacitance-Max (pF)0.8
- Transition Frequency-Nom (fT) (MHz)6500
0 suppliers available to buy or to bid for S2507
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
S2507
Send an RFQ
S2507