RN4989(TE85L,F)
Toshiba Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionNPN + PNP BRT Q1BSR=47KOHM Q1BER
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- Number of Elements2
- Polarity/Channel TypeNPN AND PNP
- DC Current Gain-Min (hFE)70
- Power Dissipation-Max (W)0.2
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Current-Max (IC) (A)0.1
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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RN4989(TE85L,F)
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RN4989(TE85L,F)