RN4911TE85N
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max0.3 V
- JESD-30 CodeR-PDSO-G6
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN AND PNP
- Transistor ApplicationSWITCHING
- DC Current Gain-Min (hFE)120
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.1 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max50 V
- Transition Frequency-Nom (fT)250 MHz
- Collector-base Capacitance-Max6 pF
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RN4911TE85N