RN4909
Toshiba Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G6
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- VCEsat-Max (V)0.3
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureBUILT-IN BIAS RESISITOR RATIO IS 0.468
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN AND PNP
- DC Current Gain-Min (hFE)70
- Power Dissipation-Max (W)0.2
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Current-Max (IC) (A)0.1
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)50
- Collector-base Capacitance-Max (pF)6
- Transition Frequency-Nom (fT) (MHz)250
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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RN4909
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RN4909