RN2904,LF by Toshiba Corporation | Sourcengine

Toshiba Corporation RN2904,LF

Lifecycle status
Active
RoHS
RoHS compliant
Description
TRANS 2PNP PREBIAS 0.2W US6
Category
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.3
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
80
Power Dissipation-Max (W)
0.2
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
50
Power Dissipation Ambient-Max (W)
0.2
Collector-base Capacitance-Max (pF)
6
Transition Frequency-Nom (fT) (MHz)
200
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED