RN2510(TE85L,F)
Toshiba Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionBipolar Transistors - Pre-Biased smv pln (lf) transistor pd=300mw f=200mhz
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- Number of Elements2
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)120
- Power Dissipation-Max (W)0.3
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Current-Max (IC) (A)0.1
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 suppliers available to buy or to bid for RN2510(TE85L,F)
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
RN2510(TE85L,F)
Send an RFQ
RN2510(TE85L,F)