RN2101MFV
Toshiba Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F3
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)30
- Power Dissipation-Max (W)0.15
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Current-Max (IC) (A)0.1
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)50
- Transition Frequency-Nom (fT) (MHz)250
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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RN2101MFV
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RN2101MFV