RN1903,LF(CT
Toshiba Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionBipolar Transistors - Pre-Biased transistor
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G6
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionDUAL
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 1
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)70
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Current-Max (IC) (A)0.1
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)50
- Transition Frequency-Nom (fT) (MHz)250
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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RN1903,LF(CT