RN1414 by Toshiba Corporation | Sourcengine

Toshiba Corporation RN1414

Lifecycle status
Active
RoHS
RoHS compliant
Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Category
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
VCEsat-Max (V)
0.3
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 10
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
50
Power Dissipation-Max (W)
0.2
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
50
Power Dissipation Ambient-Max (W)
0.2
Collector-base Capacitance-Max (pF)
6
Transition Frequency-Nom (fT) (MHz)
250
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED