RN1224
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Transistor ApplicationSWITCHING
- DC Current Gain-Min (hFE)90
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.8 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max50 V
- Transition Frequency-Nom (fT)300 MHz
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RN1224
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RN1224