RN1006
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-PBCY-T3
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- JEDEC-95 CodeTO-92
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 10
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Transistor ApplicationSWITCHING
- DC Current Gain-Min (hFE)80
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.1 A
- Power Dissipation-Max (Abs)0.4 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max50 V
- Transition Frequency-Nom (fT)250 MHz
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RN1006