PTVA120121MV1R1KXUMA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusTransferred
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeS-PDSO-N10
- ConfigurationSINGLE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee4
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals10
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)20.5
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)105
- Operating Temperature-Max (Cel)225
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PTVA120121MV1R1KXUMA1