PTB20181
INFINEON TECHNOLOGIES AG
- Lifecycle statusTransferred
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDCC-N4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- J-STD-609 Codee3
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)1.1
- Collector-emitter Voltage-Max (V)28
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PTB20181