PSMN2R3-100SSE by Nexperia BV | Sourcengine

Nexperia BV PSMN2R3-100SSE

Lifecycle status
Active
Description
Power Field-Effect Transistor, 262A I(D), 100V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Reference Standard
IEC-60134
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
262 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
47 pF
DS Breakdown Voltage-Min
100 V
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-55 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
341 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
732 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.0022 ohm
Pulsed Drain Current-Max (IDM)
1047 A
Time@Peak Reflow Temperature-Max (s)
30