PSMN2R0-25MLD by Nexperia BV | Sourcengine

Nexperia BV PSMN2R0-25MLD

Lifecycle status
Active
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 70A I(D), 25V, 0.00306ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
70
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
25
Peak Reflow Temperature (Cel)
260
Avalanche Energy Rating (Eas) (mJ)
361
Pulsed Drain Current-Max (IDM) (A)
555
Drain-source On Resistance-Max (ohm)
0.00306
Screening Level / Reference Standard
IEC-60134
Time@Peak Reflow Temperature-Max (s)
30