PSMN030-150B
Nexperia BV
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 55.5A I(D), 150V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)55.5 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min150 V
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)300 mJ
- Peak Reflow Temperature (Cel)245
- Drain-source On Resistance-Max0.03 ohm
- Pulsed Drain Current-Max (IDM)222 A
- Time@Peak Reflow Temperature-Max (s)30
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PSMN030-150B
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PSMN030-150B