PSMN011-60HL
Nexperia BV
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 35A I(D), 60V, 0.0115ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-X8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormUNSPECIFIED
- FET TechnologyTRENCH MOSFET
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)68
- Drain Current-Max (ID) (A)35
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)173
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)118
- Pulsed Drain Current-Max (IDM) (A)204
- Drain-source On Resistance-Max (ohm)0.0115
- Screening Level / Reference StandardIEC-60134
- Time@Peak Reflow Temperature-Max (s)30
0 suppliers available to buy or to bid for PSMN011-60HL
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
PSMN011-60HL
Send an RFQ
PSMN011-60HL