PSMN005-55P
Nexperia BV
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 75A I(D), 55V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)230
- Drain Current-Max (ID) (A)75
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)55
- Feedback Cap-Max (Crss) (pF)700
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)268
- Pulsed Drain Current-Max (IDM) (A)240
- Drain-source On Resistance-Max (ohm)0.0067
- Screening Level / Reference StandardIEC-134
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PSMN005-55P