PMV40UN
Nexperia BV
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionSmall Signal Field-Effect Transistor, 4.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-236AB
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)4.9 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.047 ohm
- Time@Peak Reflow Temperature-Max (s)30
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PMV40UN