PMV16UN
Nexperia BV
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 5.8A I(D), 20V, 0.018ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-236AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-236AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyTRENCH MOSFET
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)4.17
- Drain Current-Max (ID) (A)5.8
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Feedback Cap-Max (Crss) (pF)85
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)25
- Drain-source On Resistance-Max (ohm)0.018
- Screening Level / Reference StandardIEC-60134
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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