PHT6N06T/T3
Nexperia BV
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Additional FeatureESD PROTECTED
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)5.5 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min55 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)15 mJ
- Drain-source On Resistance-Max0.15 ohm
- Pulsed Drain Current-Max (IDM)22 A
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PHT6N06T/T3