PHB63NQ03LT,118
Nexperia BV
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 68.9A I(D), 30V, 0.0177ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)68.9
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Pulsed Drain Current-Max (IDM) (A)240
- Drain-source On Resistance-Max (ohm)0.0177
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PHB63NQ03LT,118