PH20100S
Nexperia BV
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 34.3A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)34.3 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min100 V
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)250 mJ
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.023 ohm
- Pulsed Drain Current-Max (IDM)134 A
- Time@Peak Reflow Temperature-Max (s)30
0 suppliers available to buy or to bid for PH20100S
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
PH20100S
Send an RFQ
PH20100S