OMD100V by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG OMD100V

Lifecycle status
Active-Unconfirmed
REACH
REACH compliant
Description
Power Field-Effect Transistor, 25A I(D), 100V, 0.08ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-MDFM-F12
Configuration
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
4
Number of Terminals
12
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
25
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Pulsed Drain Current-Max (IDM) (A)
100
Drain-source On Resistance-Max (ohm)
0.08