OM6232SSV
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-MSFM-P6
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Number of Terminals6
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)22 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min500 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)1000 mJ
- Drain-source On Resistance-Max0.27 ohm
- Pulsed Drain Current-Max (IDM)85 A
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OM6232SSV