OM6053SJV
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 25A I(D), 600V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-267AA
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)25 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min600 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.23 ohm
- Pulsed Drain Current-Max (IDM)75 A
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OM6053SJV