OM6012SMV
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-CQCC-N28
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeSQUARE
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- Terminal PositionQUAD
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals28
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)8 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min500 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.85 ohm
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OM6012SMV