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NXH80B120H2Q0SG

ONSEMI

ONSEMI NXH80B120H2Q0SG
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • VCEsat-Max
    2.5 V
  • JESD-30 Code
    R-XUFM-X22
  • Configuration
    COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
  • JESD-609 Code
    e3
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    UNSPECIFIED
  • Case Connection
    ISOLATED
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Terminal Position
    UPPER
  • Number of Elements
    2
  • Number of Terminals
    22
  • Package Body Material
    UNSPECIFIED
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Application
    POWER CONTROL
  • Gate-emitter Voltage-Max
    20 V
  • Operating Temperature-Max
    125 Cel
  • Operating Temperature-Min
    -40 Cel
  • Collector Current-Max (IC)
    41 A
  • Power Dissipation-Max (Abs)
    103 W
  • Transistor Element Material
    SILICON
  • Gate-emitter Thr Voltage-Max
    6.4 V
  • Collector-emitter Voltage-Max
    1200 V

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NXH80B120H2Q0SG