NXH80B120H2Q0SG
ONSEMI
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionTrans IGBT Module N-CH 1200V 41A 103W 20-Pin Case 180AJ Tray
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.5 V
- JESD-30 CodeR-XUFM-X22
- ConfigurationCOMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals22
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-40 Cel
- Collector Current-Max (IC)41 A
- Power Dissipation-Max (Abs)103 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.4 V
- Collector-emitter Voltage-Max1200 V
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NXH80B120H2Q0SG