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NVTFS5820NLT1G

ONSEMI

NVTFS5820NLT1G Datasheet
ONSEMI NVTFS5820NLT1G
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    S-PDSO-F8
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    SQUARE
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    FLAT
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • DLA Qualification
    Not Qualified
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    8
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID) (A)
    11
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    60
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Operating Temperature-Max (Cel)
    175
  • Avalanche Energy Rating (Eas) (mJ)
    48
  • Pulsed Drain Current-Max (IDM) (A)
    247
  • Drain-source On Resistance-Max (ohm)
    0.015
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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NVTFS5820NLT1G