NVD5C478NLT4G by ONSEMI | Sourcengine

ONSEMI NVD5C478NLT4G

Lifecycle status
Active
RoHS
RoHS compliant
Description
Trans MOSFET N-CH 40V 14A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
30
Drain Current-Max (ID) (A)
45
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
25
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
98
Pulsed Drain Current-Max (IDM) (A)
220
Drain-source On Resistance-Max (ohm)
0.0118
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30