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NVATS4A102PZT4G

ONSEMI

ONSEMI NVATS4A102PZT4G
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PSSO-G2
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • J-STD-609 Code
    e6
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    Tin/Bismuth (Sn/Bi)
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    2
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    P-CHANNEL
  • Power Dissipation-Max (W)
    48
  • Drain Current-Max (ID) (A)
    44
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    30
  • Peak Reflow Temperature (Cel)
    260
  • Operating Temperature-Max (Cel)
    175
  • Operating Temperature-Min (Cel)
    -55
  • Avalanche Energy Rating (Eas) (mJ)
    58
  • Pulsed Drain Current-Max (IDM) (A)
    132
  • Drain-source On Resistance-Max (ohm)
    0.0185
  • Screening Level / Reference Standard
    AEC-Q101
  • Time@Peak Reflow Temperature-Max (s)
    30

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NVATS4A102PZT4G
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NVATS4A102PZT4G