NTMFSS1D5N06CLT1G by ONSEMI | Sourcengine

ONSEMI NTMFSS1D5N06CLT1G

Lifecycle status
Active-Unconfirmed
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 36A I(D), 60V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
167
Drain Current-Max (ID) (A)
36
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
45
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
451
Pulsed Drain Current-Max (IDM) (A)
900
Drain-source On Resistance-Max (ohm)
0.0023
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED