NTMFS6H864NT1G by ONSEMI | Sourcengine

ONSEMI NTMFS6H864NT1G

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 21A I(D), 80V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F5
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
21 A
DS Breakdown Voltage-Min
80 V
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
33 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
80 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.053 ohm
Pulsed Drain Current-Max (IDM)
92 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED