NTMFS1D5N04HLT1G by ONSEMI | Sourcengine

ONSEMI NTMFS1D5N04HLT1G

Lifecycle status
Active
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 210A I(D), 44V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
110
Drain Current-Max (ID) (A)
210
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
44
Feedback Cap-Max (Crss) (pF)
74
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
290
Pulsed Drain Current-Max (IDM) (A)
900
Drain-source On Resistance-Max (ohm)
0.002